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RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic

DMEA254-P001

This grant opportunity aims to create and showcase a low-noise and power amplifier using advanced GlobalFoundries technology to enhance output power, linearity, and efficiency in radio communication systems for military and commercial uses.

The objective is to design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) in a commercially available state-of-the-art GlobalFoundries (GF) 200-mm Gallium Nitride on Silicon technology (130RFG1) to improve higher output power density, linearity, and efficiency in …

Source

Agency: U.S. Department of Defense
Program: SBIR

Dates

Topic Opens: September 24, 2025
Topic Closes: October 22, 2025

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