RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
DMEA254-P001This grant opportunity aims to create and showcase a low-noise and power amplifier using advanced GlobalFoundries technology to enhance output power, linearity, and efficiency in radio communication systems for military and commercial uses.
The objective is to design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) in a commercially available state-of-the-art GlobalFoundries (GF) 200-mm Gallium Nitride on Silicon technology (130RFG1) to improve higher output power density, linearity, and efficiency in …
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