RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
U.S. Department of Defense
Description
This grant opportunity aims to create and showcase a low-noise and power amplifier using advanced GlobalFoundries technology to enhance output power, linearity, and efficiency in radio communication systems for military and commercial uses.
The objective is to design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) in a commercially available state-of-the-art GlobalFoundries (GF) 200-mm Gallium Nitride on Silicon technology (130RFG1) to improve higher output power density, linearity, and efficiency in …
Source
Grant ID
DMEA254-P001
Agency
U.S. Department of Defense
Program
SBIR
Key Dates
Topic Opens
September 24, 2025
Topic Closes
October 22, 2025
Documents
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